APT15GT120SRDQ1G
Microsemi Corporation
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max30 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)36 A
- Power Dissipation-Max (Abs)250 W
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max1200 V
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APT15GT120SRDQ1G