Microsemi Corporation APT1204R7SFLLE3 | 搜芯易Sourcengine

Microsemi Corporation APT1204R7SFLLE3

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1200
Avalanche Energy Rating (Eas) (mJ)
425
Pulsed Drain Current-Max (IDM) (A)
14
Drain-source On Resistance-Max (ohm)
4.7