ADVANCED POWER TECHNOLOGY INC APT1201R4BLL | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC APT1201R4BLL

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
9 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
1200 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
300 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1210 mJ
Drain-source On Resistance-Max
1.4 ohm
Pulsed Drain Current-Max (IDM)
36 A