APT10M30AVR
ADVANCED POWER TECHNOLOGY INC
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 65A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-204AE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureHIGH VOLTAGE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)65
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Avalanche Energy Rating (Eas) (mJ)1500
- Pulsed Drain Current-Max (IDM) (A)260
- Drain-source On Resistance-Max (ohm)0.03
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APT10M30AVR