Microsemi Corporation APT10M11LVRG | 搜芯易Sourcengine

Microsemi Corporation APT10M11LVRG

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-264AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
100
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
2500
Pulsed Drain Current-Max (IDM) (A)
400
Drain-source On Resistance-Max (ohm)
0.011