ADVANCED POWER TECHNOLOGY INC APT10M07JVFR | 搜芯易Sourcengine

ADVANCED POWER TECHNOLOGY INC APT10M07JVFR

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
225
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
3600
Pulsed Drain Current-Max (IDM) (A)
900
Drain-source On Resistance-Max (ohm)
0.007
Screening Level / Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED