Microsemi Corporation APT10050B2VRG | 搜芯易Sourcengine

Microsemi Corporation APT10050B2VRG

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH VOLTAGE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
21
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
2500
Pulsed Drain Current-Max (IDM) (A)
84
Drain-source On Resistance-Max (ohm)
0.5