Advanced Power Electronics Corp. AP86T02GJB | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP86T02GJB

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
75
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
25
Feedback Cap-Max (Crss) (pF)
360
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
300
Drain-source On Resistance-Max (ohm)
0.006
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED