Advanced Power Electronics Corp. AP75N07GW | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP75N07GW

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 90A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
90 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
75 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
450 mJ
Drain-source On Resistance-Max
0.011 ohm
Pulsed Drain Current-Max (IDM)
360 A