AP70T03AJ
Advanced Power Electronics Corp.
- 生命周期状态Contact Mfr
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-251
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)60
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Operating Temperature-Max (Cel)175
- Pulsed Drain Current-Max (IDM) (A)195
- Drain-source On Resistance-Max (ohm)0.009
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AP70T03AJ