Advanced Power Electronics Corp. AP6P090J | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP6P090J

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
36.7
Drain Current-Max (ID) (A)
15
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
80
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.13
Avalanche Energy Rating (Eas) (mJ)
32
Pulsed Drain Current-Max (IDM) (A)
50
Drain-source On Resistance-Max (ohm)
0.09