Advanced Power Electronics Corp. AP4513GH-A | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP4513GH-A

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 7.7A I(D), 35V, 0.032ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
2
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
7.7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
35 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.032 ohm
Pulsed Drain Current-Max (IDM)
40 A