Advanced Power Electronics Corp. AP3R303GMT-HF | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP3R303GMT-HF

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 31A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
31 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
28.8 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.0033 ohm
Pulsed Drain Current-Max (IDM)
250 A