Advanced Power Electronics Corp. AP2P9R0LYT | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP2P9R0LYT

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 20V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-F
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
20 V
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.008 ohm
Pulsed Drain Current-Max (IDM)
50 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED