Advanced Power Electronics Corp. AP2762R-A | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP2762R-A

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
650 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
18 mJ
Drain-source On Resistance-Max
1.4 ohm
Pulsed Drain Current-Max (IDM)
24 A