Advanced Power Electronics Corp. AP2612GY-HF | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP2612GY-HF

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Power Field-Effect Transistor, 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
DS Breakdown Voltage-Min
30 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.035 ohm
Pulsed Drain Current-Max (IDM)
20 A