AP10TN5R5MT
Advanced Power Electronics Corp.
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)104
- Drain Current-Max (ID) (A)60
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Feedback Cap-Max (Crss) (pF)25
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)350
- Pulsed Drain Current-Max (IDM) (A)400
- Drain-source On Resistance-Max (ohm)0.0055
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AP10TN5R5MT