Advanced Power Electronics Corp. AP06P20GJ-HF | 搜芯易Sourcengine

Advanced Power Electronics Corp. AP06P20GJ-HF

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
Power Field-Effect Transistor, 4.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
4.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Pulsed Drain Current-Max (IDM) (A)
12
Drain-source On Resistance-Max (ohm)
1.4