- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 6.3A I(D), 40V, 0.033ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PDIP-T8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Drain Current-Max (ID)6.3 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)63 pF
- DS Breakdown Voltage-Min40 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)2.5 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max2.5 W
- Drain-source On Resistance-Max0.033 ohm
- Pulsed Drain Current-Max (IDM)20 A
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AOP608