AONR66821
Alpha and Omega Semiconductor
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 93A I(D), 80V, 0.009ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologySPLIT GATE TRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)104
- Drain Current-Max (ID) (A)93
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)80
- Feedback Cap-Max (Crss) (pF)11
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)36
- Pulsed Drain Current-Max (IDM) (A)161
- Drain-source On Resistance-Max (ohm)0.009
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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