Advanced Micro Devices, Inc. (AMD) AM29LV001BB-90EEB | 搜芯易Sourcengine

Advanced Micro Devices, Inc. (AMD) AM29LV001BB-90EEB

生命周期状态
Transferred
说明
Flash, 128KX8, 90ns, PDSO32
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Boot Block
BOTTOM
Technology
CMOS
JESD-30 Code
R-PDSO-G32
Memory Width
8
Package Code
SOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
MIN 1000000 WRITE CYCLES; BOTTOM BOOT BLOCK
Memory Organization
128KX8
Number of Functions
1
Number of Terminals
32
Access Time-Max (ns)
90
Number of Words Code
128K
Memory Density (bits)
1048576
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.7
Supply Voltage-Nom (V)
3
Number of Words (words)
131072
Programming Voltage (V)
3
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55