ANALOG POWER INC AM2398N | 搜芯易Sourcengine

ANALOG POWER INC AM2398N

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 2.2A I(D), 60V, 0.194ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2.2 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
27 pF
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
1.3 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.194 ohm
Pulsed Drain Current-Max (IDM)
10 A