AMCOM COMMUNICATIONS INC AM200MX-CU-R | 搜芯易Sourcengine

AMCOM COMMUNICATIONS INC AM200MX-CU-R

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Power Gain-Min (Gp)
9 dB
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6.2 A
Highest Frequency Band
C BAND
DS Breakdown Voltage-Min
9 V
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-55 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
32 W