AMCOM COMMUNICATIONS INC AM060WX-BI-R | 搜芯易Sourcengine

AMCOM COMMUNICATIONS INC AM060WX-BI-R

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Power Gain-Min (Gp)
10.5 dB
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.8 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
10 V
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-55 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
11.5 W