INFINEON TECHNOLOGIES AG AIKB15N65DF5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG AIKB15N65DF5

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
2.1
Polarity/Channel Type
N-Channel
Power Dissipation-Max (W)
105
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
28
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
174
Collector Current-Max (IC) (A)
30
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
4.8
Collector-emitter Voltage-Max (V)
650