ASI Semiconductor, Inc. AHV1012CC | 搜芯易Sourcengine

ASI Semiconductor, Inc. AHV1012CC

生命周期状态
Active
说明
Variable Capacitance Diode, 47pF C(T), Silicon, Hyperabrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-PDSO-G3
Configuration
COMMON CATHODE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Quality Factor-Min
150
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Diode Cap Tolerance (%)
10
Power Dissipation-Max (W)
0.25
Diode Capacitance-Nom (pF)
47
Diode Capacitance Ratio-Min
9.5
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Variable Capacitance Diode Classification
HYPERABRUPT