AGRB10EU
Broadcom Inc.
- 生命周期状态Active
- REACHREACH compliant
- 说明RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)39
- Operating Temperature-Max (Cel)150
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