Broadcom Inc. AGRA10EU | 搜芯易Sourcengine

Broadcom Inc. AGRA10EU

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
38.9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
200
Time@Peak Reflow Temperature-Max (s)
30