Freescale Semiconductor, Inc. AFT23H200-4S2LR6 | 搜芯易Sourcengine

Freescale Semiconductor, Inc. AFT23H200-4S2LR6

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

FET Technology
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
294
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Time@Peak Reflow Temperature-Max (s)
40