AFP02N8-000
Skyworks Solutions,Inc.
- 生命周期状态Discontinued
- 说明RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionISOLATED
- Power Gain-Min (Gp)8.5 dB
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.09 A
- Highest Frequency BandX BAND
- DS Breakdown Voltage-Min6 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max0.3 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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AFP02N8-000