ONSEMI AFGH40T65SQDN | 搜芯易Sourcengine

ONSEMI AFGH40T65SQDN

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
GENERAL PURPOSE SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
ISOLATED
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
238
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
27.2
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
88.8
Collector Current-Max (IC) (A)
80
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
650
Screening Level / Reference Standard
AEC-Q101