INTEGRATED CIRCUIT TECHNOLOGY CORP AF8958CNLA | 搜芯易Sourcengine

INTEGRATED CIRCUIT TECHNOLOGY CORP AF8958CNLA

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDIP-T8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain Current-Max (ID)
7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.028 ohm
Pulsed Drain Current-Max (IDM)
20 A