ASI Semiconductor, Inc. ADN9002-01 | 搜芯易Sourcengine

ASI Semiconductor, Inc. ADN9002-01

生命周期状态
Active-Unconfirmed
说明
Mixer Diode, Low Barrier, X Band, 2000ohm Z(V) Max, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
Technology
SCHOTTKY
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
Impedance-Max
2000 ohm
Impedance-Min
1000 ohm
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Frequency Band
X BAND
Case Connection
ISOLATED
Terminal Position
AXIAL
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
GLASS
Diode Element Material
SILICON
Pulsed Input Power-Max
0.1 W
Type of Schottky Barrier
LOW BARRIER
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-65 Cel
Tangential Signal Sensitivity-Min
-52 dBm