ASI Semiconductor, Inc. ABP9001-823 | 搜芯易Sourcengine

ASI Semiconductor, Inc. ABP9001-823

生命周期状态
Active-Unconfirmed
说明
Mixer Diode, Low Barrier, X Band, 6.5dB Noise Figure, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
Technology
SCHOTTKY
JESD-30 Code
S-CXMW-F3
Configuration
COMMON CATHODE, 2 ELEMENTS
Package Shape
SQUARE
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
Frequency Band
X BAND
Noise Figure-Max
6.5 dB
Terminal Position
UNSPECIFIED
Number of Elements
2
Number of Terminals
3
Qualification Status
Not Qualified
Diode Capacitance-Max
0.3 pF
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Diode Element Material
SILICON
Pulsed Input Power-Max
0.075 W
Type of Schottky Barrier
LOW BARRIER
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-65 Cel