Nexperia BV 934064245127 | 搜芯易Sourcengine

Nexperia BV 934064245127

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 120A I(D), 75V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
263
Drain Current-Max (ID) (A)
120
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
75
Feedback Cap-Max (Crss) (pF)
580
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
329
Pulsed Drain Current-Max (IDM) (A)
553
Drain-source On Resistance-Max (ohm)
0.0074
Screening Level / Reference Standard
AEC-Q101; IEC-60134