Nexperia BV 934061274518 | 搜芯易Sourcengine

Nexperia BV 934061274518

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 14.9A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position
DUAL
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
6.9
Drain Current-Max (ID) (A)
14.9
Moisture Sensitivity Level
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
275
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
28.8
Drain-source On Resistance-Max (ohm)
0.019
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
30