UTC, Ltd. 8N65G-ML-TN3-R | 搜芯易Sourcengine

UTC, Ltd. 8N65G-ML-TN3-R

生命周期状态
Active
说明
Power Field-Effect Transistor, 8A I(D), 650V, 1.2ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
50
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
11.5
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
320
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
1.2