Integrated Device Technology, Inc. 8413206RA | 搜芯易Sourcengine

Integrated Device Technology, Inc. 8413206RA

生命周期状态
Transferred
说明
CDIP 25.40x7.62x2.90 mm 2.54mm Pitch
类别
Semiconductors Memory ICs SRAMs OTHER SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
Width (mm)
7.62
Length (mm)
25.3365
JESD-30 Code
R-GDIP-T20
Memory Width
1
Package Code
DIP
Output Enable
NO
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
OTHER SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Memory Organization
16KX1
Number of Functions
1
Number of Terminals
20
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
25
Number of Words Code
16K
Memory Density (bits)
16384
Package Body Material
CERAMIC, GLASS-SEALED
Output Characteristics
3-STATE
Seated Height-Max (mm)
5.08
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
16384
Supply Current-Max (mA)
70
Package Equivalence Code
DIP20,.3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883