Rochester Electronics, LLC 8201006ZA | 搜芯易Sourcengine

Rochester Electronics, LLC 8201006ZA

生命周期状态
Active
说明
Page Mode DRAM, 64KX1, 150ns, MOS, CQCC18
类别
Semiconductors Memory ICs DRAMs PAGE MODE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
MOS
JESD-30 Code
R-XQCC-N18
Memory Width
1
Package Code
QCCN
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
Memory IC Type
PAGE MODE DRAM
Refresh Cycles
256
DLA Qualification
Qualified
Temperature Grade
OTHER
Terminal Position
QUAD
Memory Organization
64KX1
Number of Terminals
18
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
150
Number of Words Code
64K
Memory Density (bits)
65536
Package Body Material
CERAMIC
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
65536
Supply Current-Max (mA)
60
Package Equivalence Code
LCC18,.3X.43
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
110
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
38535Q/M;38534H;883B
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED