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7MBV4154S80

Integrated Device Technology, Inc.

Integrated Device Technology, Inc. 7MBV4154S80
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Memory Width
    64
  • Surface Mount
    NO
  • J-STD-609 Code
    e0
  • Memory IC Type
    SRAM MODULE
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Memory Organization
    128KX64
  • Number of Terminals
    160
  • Access Time-Max (ns)
    7
  • Number of Words Code
    128K
  • Memory Density (bits)
    8388608
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    3.3
  • Number of Words (words)
    131072
  • Standby Current-Max (A)
    0.16
  • Standby Voltage-Min (V)
    3.15
  • Supply Current-Max (mA)
    1760
  • Package Equivalence Code
    CARD160
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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7MBV4154S80
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7MBV4154S80