Fuji Electric Co., Ltd. 7MBR35VJB120A-50 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 7MBR35VJB120A-50

生命周期状态
Active
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X39
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.5
Case Connection
ISOLATED
Terminal Position
UPPER
Fall Time-Max (ns)
300
Number of Elements
7
Number of Terminals
39
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
600
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
1200
Turn-on Time-Nom (ton) (ns)
160
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
1000
Turn-off Time-Nom (toff) (ns)
360
Collector Current-Max (IC) (A)
35
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED