Fuji Electric Co., Ltd. 7MBR100XNA065-50 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 7MBR100XNA065-50

生命周期状态
Active
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X43
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.05
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
7
Number of Terminals
43
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
330
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
600
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
560
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
650