Integrated Device Technology, Inc. 7MB6049S33K | 搜芯易Sourcengine

Integrated Device Technology, Inc. 7MB6049S33K

生命周期状态
Transferred
说明
Cache SRAM Module, 16KX60, 20ns, CMOS, PQMA120
类别
Semiconductors Memory ICs SRAMs CACHE SRAM MODULE

ECCN
3A991.b.2.b
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PQMA-T120
Memory Width
60
Package Code
QIP
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
CACHE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Memory Organization
16KX60
Number of Functions
1
Number of Terminals
120
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
20
Number of Words Code
16K
Memory Density (bits)
983040
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
16384
Standby Current-Max (A)
0.75
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
3600
Package Equivalence Code
QI120,2.9/3.0,100
Clock Frequency-Max (MHz)
33
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0