Integrated Device Technology, Inc. 7M820S75CB | 搜芯易Sourcengine

Integrated Device Technology, Inc. 7M820S75CB

生命周期状态
Discontinued
说明
SRAM Module, 128KX8, 75ns, CMOS, CDIP64
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
JESD-30 Code
R-XDIP-T64
Memory Width
8
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Memory Organization
128KX8
Number of Terminals
64
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
75
Number of Words Code
128K
Memory Density (bits)
1048576
Package Body Material
CERAMIC
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
131072
Package Equivalence Code
DIP64,.9
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883 Class B (Modified)