7M1003S35C
Integrated Device Technology, Inc.
- 生命周期状态Transferred
- 说明SB 82.29x22.86x3.56 mm 2.54mm Pitch
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-XDIP-T64
- Memory Width8
- Organization64KX8
- Package CodeDIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density524288 bit
- Memory IC TypeMULTI-PORT SRAM MODULE
- Operating ModeASYNCHRONOUS
- Terminal Pitch2.54 mm
- Access Time-Max35 ns
- Number of Ports2
- Number of Words65536 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max660 mA
- Number of Terminals64
- Standby Current-Max0.065 Amp
- Standby Voltage-Min4.5 V
- Number of Words Code64K
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC
- Output Characteristics3-STATE
- Package Equivalence CodeDIP64,.6
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Moisture Sensitivity Level1
- Peak Reflow Temperature (Cel)260
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7M1003S35C
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7M1003S35C