Integrated Device Technology, Inc. 7M1001S65CB | 搜芯易Sourcengine

Integrated Device Technology, Inc. 7M1001S65CB

生命周期状态
Transferred
REACH
REACH compliant
说明
SB 82.29x22.86x3.56 mm 2.54mm Pitch
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
15.24
Length (mm)
81.28
JESD-30 Code
R-CDMA-T64
Memory Width
8
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Memory Organization
128KX8
Number of Functions
1
Number of Terminals
64
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
65
Number of Words Code
128K
Memory Density (bits)
1048576
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Seated Height-Max (mm)
9.652
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
131072
Standby Current-Max (A)
0.245
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
1130
Package Equivalence Code
DIP64,.6
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883 Class B