Integrated Device Technology, Inc. 7M1001S65C | 搜芯易Sourcengine

Integrated Device Technology, Inc. 7M1001S65C

生命周期状态
Transferred
REACH
REACH compliant
说明
SB 82.29x22.86x3.56 mm 2.54mm Pitch
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Width
15.24 mm
Length
81.28 mm
I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-CDMA-T64
Memory Width
8
Organization
128KX8
Package Code
DIP
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory Density
1048576 bit
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Terminal Pitch
2.54 mm
Access Time-Max
65 ns
Number of Ports
2
Number of Words
131072 words
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
Seated Height-Max
9.652 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
940 mA
Number of Functions
1
Number of Terminals
64
Standby Current-Max
0.125 Amp
Standby Voltage-Min
4.5 V
Number of Words Code
128K
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Package Equivalence Code
DIP64,.6
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260