Integrated Device Technology, Inc. 71V65602S100PFGI8 | 搜芯易Sourcengine

Integrated Device Technology, Inc. 71V65602S100PFGI8

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
TQFP 20.00x14.00x1.40 mm 0.65mm Pitch
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
14
Length (mm)
20
JESD-30 Code
R-PQFP-G100
Memory Width
36
Package Code
LQFP
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN
Temperature Grade
INDUSTRIAL
Terminal Position
QUAD
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
256KX36
Number of Functions
1
Number of Terminals
100
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
5
Number of Words Code
256K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.6
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
262144
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40