Integrated Device Technology, Inc. 71V424VL10YGI | 搜芯易Sourcengine

Integrated Device Technology, Inc. 71V424VL10YGI

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Application Specific SRAM, 512KX8, 10ns, CMOS, PDSO32
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-J32
Memory Width
8
Package Code
SOJ
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e3
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
512KX8
Number of Terminals
32
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
10
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
3.3
Number of Words (words)
524288
Standby Current-Max (A)
0.01
Standby Voltage-Min (V)
3
Supply Current-Max (mA)
165
Package Equivalence Code
SOJ32,.44
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30