Integrated Device Technology, Inc. 71V2559S80BQ8 | 搜芯易Sourcengine

Integrated Device Technology, Inc. 71V2559S80BQ8

生命周期状态
Transferred
REACH
REACH compliant
说明
CABGA 15.00x13.00x1.20 mm 1.00mm Pitch
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
13
Length (mm)
15
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
TBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
FLOW-THROUGH ARCHITECTURE
Memory Organization
256KX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
8
Number of Words Code
256K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
262144
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0